本期内容
2023年4/5 月刊
封面故事 Cover Story
立方SiC: 
电力电子行业的明日冠军
Cubic SiC: Tomorrow's champion for power electronics
编者话 Editorial
半导体材料武林外传
Our own swordsmen of Semiconductor materials
业界动态 Industry
江苏晶工倒角机顺利通过国内 、蓝宝石及硅晶圆厂家批量验证，已签 订订单100多台
Jiangsu JingGong edge grinding machines have been successfully passed the batch verification of domestic silicon carbide, sapphire and silicon wafer manufacturers, and more than 100 orders have been signed
英诺赛科推出高性价比120W氮化镓方案，采用TO封装，效率达94.6%
Innoscience offers a cost-effective 120W gallium nitride package with an efficiency of 94.6%
能讯半导体微波能2.4-2.5GHz 600W氮化镓射频功率放大器
Dynax Semiconductor releases microwave energy 2.4-2.5GHz 600W gallium nitride RF power amplifier
Vector将为下一代数据中心实现PCSEL商业化
Vector to commercialise PCSEL for next-gen data centres
三菱将建设 晶圆厂
Mitsubishi to build SiC fab
荔园定律: 
消费类氮化镓快充的发展趋势
Liyuan's Law: The development trend of consumer gallium nitride fast charging
扬杰科技拟10亿元投建6英寸 晶圆生产线
Yangjie Electronic Technology plans to invest 1 billion yuan to build a 6-inch silicon carbide power electronic device production line
宽禁带半导体国家工程研究中心专栏 WBS Column
科技前沿 Research Review
北京大学团队实现全氮化物Mini-LED全彩显示
The Peking University team realized Full-Color Nitride Mini-LED Displays
退火AlN模板有助于远紫外线LED的发展
Annealed AlN templates aid far-UVC LEDs
MXene范德华接触在氮化镓高电子迁移率晶体管中的应用
Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors
技术 Technology
采用超薄ITO界面层在N极性面上获得低接触电阻率的垂直氮化镓肖特基 势垒二极管
Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer
降低Ⅲ-Ⅴ族外延成本
Bringing down the cost of Ⅲ-Ⅴ epitaxy
展示MBE大批量生产的资质
Showcasing MBE's credentials for high-volume production
现在是将GaN IC商业化的时候了
Now's the time to commercialise the GaN IC
九峰山实验室专栏 JFS Laboratory Column
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2024年 8/9 月刊
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