本期内容
2023年 2/3 月刊
封面故事 Cover Story
6寸
器件代工厂上路奔跑中
Hitting the road running of 6 inch silicon carbide device foundry
DAVID CLARK和RAE HYNDMAN，Clas-SiC公司
编者话 Editorial
超宽禁带半导体之金刚石
Diamond of Ultra Wide Bandgap Semiconductors
业界动态 Industry
英飞凌与Resonac扩大
合作范围
Infineon and Resonac expand SiC cooperation
晶盛机电成功发布6英寸双片式SiC外延设备
JSG has successfully released 6 inch dual-wafer SiC epitaxial system
MicroLED量产在即
MicroLED mass production on the way
天域半导体获约12 亿元融资，系
外延片企业
TYSiC, silicon carbide epitaxial wafer enterprise received about 1.2 billion yuan of financing
Wolfspeed 宣布计划在德国建造全球最大、最先进的
器件制造工厂
Wolfspeed Announces Plan to Construct World's Largest, Most Advanced Silicon Carbide Device Manufacturing Facility in Saarland, Germany
苏州纳米所孙钱团队研制出国际首支1200V的硅衬底GaN基纵向功率器件
SINANO team has developed the world's first 1200V GaN based vertical power device on silicon substrate
Veeco收购Epiluvac AB
Veeco acquires Epiluvac AB
宽禁带半导体国家工程研究中心专栏 WBS Column
高端访谈 Top interview
回顾2022，展望2023
Looking back on 2022, looking forward to 2023
技术 Technology
推进Ga2O3掺杂
Advancing Ga2O3 doping
Fikadu Alema、Aaron Fine、William Brand和Andrei osinsky, AGNITRON公司
将GaN功率器件扩展到10kV
Stretching GaN power devices to 10 kV
Yuhao zhang, 弗吉尼亚理工学院
立方
的魅力
The allure of cubic SiC
Francesco La via，意大利微电子和微系统研究所
用立方GaN消除效率衰退
Quashing droop with cubic GaN
YI-CHIA TSAI, JEAN-PIERRE LEBURTON 和CAN BAYRAM，伊利诺伊大学香槟分校
科技前沿 Research Review
加速HVPE生长AlN
Accelerating HVPE of AlN
使用新型MOSFET增强Ga2O3的可信度
Enhancing the credentials of Ga2O3 with a novel MOSFET
消除深紫外激光二极管中的暗线缺陷
Eradicating dark-line defects in deep-UV laser diodes
九峰山实验室专栏 JFS Laboratory Column
广告索引 Advertisement Index
广告索引
Advertisement Index
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