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2022年10/11月刊

封面故事 Cover Story

编者话 Editorial

第三代半导体材料之氮化镓衬底

Gallium nitride substrate as a third - generation semiconductor materials

Wolfspeed专栏 Wolfspeed Column

Wolfspeed扩展AEC-Q101车规级 MOSFET，推出650 V E3M系列产品

650 V Silicon Carbide MOSFETs Extend Wolfspeed's AEC-Q101 Qualified E3M Range

业界动态 Industry

InP的下一站:

消费电子应用？

Next stop for InP: consumer applications?

IQE宣布与SK Siltron展开合作

IQE Announces Collaboration With SK Siltron

安森美扩建欧洲SiC工厂

Onsemi Expands European SiC Fab

英诺赛科在比利时“GaN谷”开设欧洲研发中心

Innoscience Opens European R&D Centre In Belgium's 'GaN Valley'

HexaTech投资100mm AlN衬底项目

HexaTech Invests In 100mm AlN Substrate Program

MRSI Systems，迈康尼集团宣布与 Lumentum 达成新合作，将为汽车行业提供创新的激光雷达解决方案

MRSI Systems, Mycronic Group Announces New Partnership with Lumentum to Provide Innovative LiDAR Solutions for the Automotive Industry

Aixtron推出下一代 8英寸SiC 外延系统

Aixtron Launches Next Gen SiC Epitaxy System for 200 mm

宽禁带半导体国家工程研究中心专栏 WBS Column

科技前沿 Research Review

蒸汽退火增强InP HEMT性能

Steam annealing enhances the InP HEMT

紫外线激光器实现连续激射

UVC laser delivers continuous emission

共掺杂有望实现超高效的白色Ga2O3 LEDs

Co-doping promises ultra-efficient white Ga2O3 LEDs

技术 Technology

用多孔GaN基microLEDs简化显示器

Simplifying displays with porous GaN microLEDs

利用3D单像素成像技术监测甲烷

Monitoring methane with 3D single-pixel imaging

让PICs腾飞

Getting PICs off the ground

将透明导电氧化物引入深紫外

Taking transparent conducting oxides into the deep UV

九峰山实验室专栏 JFS Laboratory Column

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